1·Method of surface treatment, crystal substrate, and semiconductor device.
表面处理方法，晶体基材，和半导体设备。
2·Thus, the semi-insulating nitride semiconductor crystal substrate in which warpage is less and cracking is less likely can be obtained.
由此，能获得其中翘曲较少且较不可能发生破裂的半绝缘氮化物半导体晶体衬底。
3·The surface smoothness of the single crystal substrate will be the most important factor, which influences the quality of the epitaxial film growth.
单晶基片的表面光洁度指标是影响后续薄膜生长质量的重要因素。
4·Sony's FPA system for liquid crystal displays USES pre-tilting at a substrate alignment layer to arrange pixels in a near-vertical alignment.
索尼fpa液晶显示器系统在基质配向层使用了预倾斜技术，来将像素安排在一个近乎垂直的配向上。
5·The influence of the crystal orientation of the substrate on microstructure is investigated by multi layer laser cladding with the powder of nickel base superalloy.
采用镍基合金粉，研究了激光多层涂覆过程中基材晶体取向对涂层凝固组织的影响规律。
6·MOCVD is an abbreviation form for Metal Organic Chemical Vapor Deposition, which is a method used to grow material crystal on substrate via MOCVD device.
MOCVD是金属有机物化学气相沉积技术的简称，即通过MOCVD设备，在衬底上生长材料晶体的一种方法。
7·The technique of leaky mode is applied to liquid crystal whose refractive index is smaller than that of the substrate.
在液晶折射率小于衬底折射率的条件下，利用漏模技术测量液晶的折射率以及液晶盒的厚度。
8·Using X-ray diffraction technique, the process of the crystal growth of metal ultrafine particles, which are prepared by sputtering method and deposited on the silica! Substrate, have been researched.
利用X -射线衍射技术对溅射沉积在非晶二氧化硅基底上的金属晶体超微粒的生长特性进行实验研究。
9·Diamond thin films were successfully deposited on single - crystal si substrate at low pressure by a homemade equipment of electron cyclotron resonance chemical vapor deposition (ECRCVD).
采用国内研制的电子回旋共振化学气相沉积(ECRCVD)设备，在单晶硅衬底上沉积了金刚石薄膜。
10·The simulation presupposes that it is possible to develop new MOS thinfilm transistors with crystal silicon substrate and lower threshold voltage.
模拟计算表明，利用薄体效应，可以形成以单晶硅为衬底的，阈电压较低的新型薄膜MOS晶体管。